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 Medium Power Transistor (60V, 1A)
2SD1834
Features 1) Darlington connection for high DC current gain (typically, DC current gain = 15000 at VCE = 3V, IC = 0.5A) 2) High input impedance. Dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
Inner circuit
C
(1)Base (2)Collector
(1)
(2)
(3)
1.0
2.5 4.0
0.4
0.4 1.5
0.5 1.5 3.0
0.4
B
(3)Emitter
B : Base C : Collector E : Emitter
E
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 60 60 7 1 2 0.5 2 150 Unit V V V A(DC) A(Pulse)
2
1
3
W
-55 to +150
C C
1 Single pulse Pw=100ms 2 RBE=0 3 Mounted on a 40x40x t 0.7mm ceramic substrate
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. 60 60 7 - - 2000 - - - Typ. - - - - - - 0.9 150 7 Max. - - - 1 1 - 1.5 - - Unit V V V A A - V MHz pF Conditions IC=50A IC=100A , RBE=0 IE=50A VCB=60V VEB=6V VCE/IC=3V/500mA IC/IB=500mA/500A VCE=5V , IE= -10mA , f=100MHz VCE=10V , IE=0A , f=1MHz
Measured using pulse current.
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c 2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.02 - Rev.B
2SD1834
Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
Data Sheet
2SD1834 MPT3 2k~ DE T100 1000
Electrical characteristics curves
0.5
COLLECTOR CURRENT : IC (A)
Ta=25C PC=0.5W
1
COLLECTOR CURRENT : IC (A)
0.4
0.3
0.2 0.1 0.05
DC CURRENT GAIN : hFE
10A 9A 8A 7A 6A 5A 4A 3A
Ta=25C VCE=3V
500k 200k 100k 50k 20k 10k 5k 2k 1k
Ta=25C
0.5
0.2
VCE=5V 3V
0.1
2A 1A
0.02 0.01
0
IB=0A
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.01 0.02
0.05 0.1
0.2
0.5 1
2
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter output characteristics
Fig.2 Ground emitter propagation characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10 5
Ta=25C
50
20 10 5
COLLECTOR CURRENT : IC (A)
Ta=25C f=1MHz IE=0A
2 Ic Max Pulse 1 0.5 Ic Max
s 0m s =1 m Pw 00 =1 Pw
2
IC/IB=1000
DC
1 0.5
500
0.2 0.1 Ta=25C 0.05 Single nonrepetitive pulse 0.5 1 2 5 10 20 50 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V)
2 1 0.5 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB(V)
0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Collector output capacitance vs. collector-base voltage
Fig.6 Safe operating area
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c 2010 ROHM Co., Ltd. All rights reserved.
2/2
2010.02 - Rev.B
Notice
Notes
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R1010A


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